Abstract
Abstract The fabrication of quantum wires and dots by masked Ga + implantation enhanced interdiffusion of GaAs/GaAlAs multiple quantum wells is reported. The carrier confinement to one dimension is detected by photoluminescence experiments. It is shown that the amplitude of the intermixing process as well as the effective width of the wire structures are depth dependent. A damage induced intermixing model has been implemented and supports an impurity-free vacancy diffusion mechanism. A spatial calculation of the damage energy distribution through an opening in a mask has been carried out to shed light on the lateral extension of the intermixing process.
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