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Abstract
The mass fabrication of Ga/AsAl xGa 1-xAs quantum-well wires and dots is described, using a high resolution synchrotron x-ray lithography system to define Au/W implantation masks and employing a Ga + implantation enhanced intermixing technique on a GaAs/AlAs/AlGaAs double barrier quantum well. The large area line and dot arrays with sizes ranging from 40 – 200 nm show a very large photoluminescence blue-shift and the influence of the mask geometry is discussed. The defined fabrication of even smaller structures by x-ray lithography is possible, but secondary effects which stem from the substrate radiation inhibit a further size decrease and the potential importance of x-ray or VUV photo-fluorescence in the resist insolation process is pointed out.
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