Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

Abstract

A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance of the inversion p-channel MOSFET fabricated using a phosphorus (P)-doped n-type diamond body. The N2 used for N-doping is safer than the PH3 used for P-doping; moreover, the doping concentration is highly controllable. Because the MOSFET, which is a classical electronic device, is driven by a gate voltage, smooth functioning was possible even at a deep donor level. The observed characteristics of the classic MOSFET operating via an N-doped body are crucial for the development of diamond power devices. In this paper, we discuss the significance of the N-doped diamond body and electrical characteristics of the inversion p-channel MOSFET fabricated using an N-doped diamond body.