Abstract
Crystal facets of InP for the reflection mirrors of short cavity laser diodes were successfully fabricated by a novel wafer process without use of cleavage. Selective InP epitaxial growth on sidewalls formed by dry etching was realized as vertical and smooth facets from crystal facets formed by cleavage. A grown facets short cavity laser diode (GFS-LD) with the facet mirrors was proposed and the characteristics were estimated.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call