Abstract
We compare facet morphology, device characteristics, and far field patterns (FFPs) for semipolar (1122) laser diodes fabricated with mechanically polished and dry etched mirror facets. Facets formed by Cl2-based dry etching produced inclined and heavily striated facets. Mechanically polished facets, in contrast, provided vertical and smooth facets (rms roughness=5.2 nm). The threshold currents of polished facet devices were on average ~ 100 and ~ 200 mA lower than etched facet devices (2 × 1200 μm2 and 4 × 1200 μm2 dimension devices, respectively). FFPs from etched facets were also shown to be obscured due to substrate reflections.
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