Abstract
We have proposed a novel fabrication method of short cavity lasers to utilize grown facet mirrors. Extremely smooth (011), as well as (01̄1), grown mirrors of InP were successfully fabricated on the sidewalls of a ridge along the [01̄1] direction on an InP substrate by using reactive ion etching (RIE) and selective chemical beam epitaxy (CBE) regrowth. By optimizing the growth temperature at a constant V III ratio, the verticality of the sidewalls after RIE was improved by selective CBE regrowth. Smooth and vertical (011) facets were obtained at the growth temperature higher 545°C. No irregular growth enhancement was observed near edges of the SiO 2 mask. A 400 μm long ridge striple laser diode with (01̄1) grown Fabry-Perot mirrors was fabricated to confirm the quality of grown mirrors formed by the proposed method. Pulsed oscillation was observed at room temperature. By comparing the threshold current with those obtained for lasers with one cleaved and one grown mirror, it was concluded that the grown mirrors have equal quality as compared to cleaved mirrors.
Published Version
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