Abstract
Extremely smooth (011)-oriented facets were fabricated by selective growth using chemical beam epitaxy (CBE) on both sides of ridges formed by reactive ion etching (RIE) on a (100)-oriented InP substrate. The verticality of the sidewalls was improved by selective CBE regrowth. In addition, parallel striae on the etched sidewalls were completely smoothed out after InP regrowth. This sidewall epitaxy technique is promising to obtain highly reflective facet mirrors of short cavity laser diodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
