Abstract
A new CMOS (Complementary Metal Oxide Semiconductor) compatible Bulk-Si FinFETs fabrication process has been proposed. Compared with conventional fabrication processes of SOI (Silicon On Insulator) and Bulk-Si FinFETs, this new approach is of low cost and simple. High performance CMOS Bulk-Si FinFETs, the fin isolated to Si substrate by oxide, have been fabricated using this new approach. With lower body doping concentration (1x15cm^-^3), PMOS shows Ion/Ioff ratio of 10^4 and short channel behavior with a subthreshold swing (SS) of 280mV/dec, a DIBL (Drain Induced Barrier Lowering) value of 258mV/V. NMOS device, with the body doping concentration up to 1x17cm^-^3, shows an Ion/Ioff ratio larger than 10^7 and SS=86mV/dec and DIBL=28mV/V.
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