Abstract
In this paper the Body-Over-Insulator (BOI) FinFET is studied regarding the drain induced barrier lowering (DIBL), self heating effect (SHE) and on-off currents with respect to variation of the length of buried oxide (BOX). Fabrication of this novel type of FinFET, the BOI FinFET, has been reported previously and different characteristics of this structure have been analyzed for a fixed BOX. However the impact of BOX length variation on device performance is yet to be investigated. In this work, the influence of the length of BOX on device performance is investigated by solving 3D self-consistent Schrodinger-Poisson equations in a coupled manner. Simulation results indicate that the length of the BOX, i.e. the degree of insulation of the channel can significantly influence the performance of FinFET. The study has shown that BOI FinFETs stand in between body-tied bulk FinFETs and SOI FinFETs and hence shows the capability of combining the strength of both Bulk and SOI FinFETs.
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