Fabrication of bipolar transistors by maskless ion implantation

Abstract

The first focused ion beam (FIB) arsenic ion implants are reported. A shallow junction, vertical npn bipolar transistor fabricated by maskless implantation of B and As is described. For comparison, devices on the same wafer were also processed with conventional, broad‐beam B and/or As implants. Good transistor performance is obtained for each type of implanted transistor. Device characteristics for FIB and conventional implants are generally the same. However, initial results indicate that diode quality and junction leakage appear somewhat degraded (excess generation–recombination) for FIB arsenic implanted devices. Characteristics of FIB boron implanted devices obtained over an extended period have been measured. These data indicate that wafer‐to‐wafer dose uniformity and quality (diode ideality and leakage currents) is equal to that for conventional implants (standard deviations <10%). Device‐to‐device quality on a single wafer is also equal for the two techniques, while the device reproducibility is somewhat less for FIB, indicating some minor fluctuations in beam current (dose).