Arsenic ion implantation through Mo and Mo silicide layers for shallow junction formation

Abstract

Arsenic implantation through either Mo films or Mo disilicide layers, followed by rapid thermal annealing has been investigated as a self-aligned process to fabricate n +- p shallow junctions for ultra-large-scale integration technology. Both procedures give junctions shallower than 0.2 μm with good electrical characteristics. Reverse current densities down to 2 nA cm −2 at −1 V, ideality factors as low as 1.05 and contact resistivities in the range 10 −7 Ωcm 2 are measured. An excellent planarity of the Si-silicide interface is exhibited by the diodes fabricated by As implantation through Mo. A structural investigation on the silicidation process induced by As implantation through Mo is reported.