Abstract

This paper presents a low cost innovative dual channel engineering to simulate the effects of arsenic and antimony implantation over breakdown voltage and on state resistance of an Ultra High Voltage (UHV) device. There are many devices in market with multiple conduction paths, but all these devices use high energy implants. But we have used a low cost and low energy implant over P-top to form an extra conduction path. Optimizations are done to obtain high breakdown voltage and lower Ron by varying the P-top and Ntop over P-top. We demonstrate interface charge analysis for both Antimony and Arsenic implantation over P-top and also we investigate the effect of N-top implantation before and after NDrift diffusion on breakdown voltage.

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