Fabrication and Performances of Different Nano-Electrode Materials on Diamond Thin Film

Abstract

Diamond/Al doped ZnO (AZO) nanowire composite films and diamond/indium tin oxide (ITO) nanowire composite films were separately grown on silicon substrates by using plasma chemical vapor deposition techniques and vacuum electron beam evaporation techniques. And the structures and morphologies of the as-deposited thin films were characterized by means of energy diffraction spectrum (EDS), X-ray diffraction spectrum (XRD), field emission scanning electron microscope (FE-SEM) and surface resistance tester. The experimental results indicate that AZO nanowires films and ITO nanowires films are made on the diamond substrates, respectively. The crystallinity of AZO films and ITO films is both fairly high, and the diameters of nanowires are both uniform. The average diameters of the nanowires is about 30nm of AZO and 50nm of ITO. And the corresponding film resistivity was 8.0×10-4Ω·cm and 2.0×10-4Ω·cm respectively. The feature of AZO nanowire and ITO nanowire grew on diamond films, which act as nano-electrodes, played an important role in further improving the surface resistance performances of diamond.