Abstract
Cubic boron nitride (c-BN) thin films could be deposited on diamond using the plasma chemical vapor deposition (CVD) technique at low pressure. The deposited films are characterized by infrared absorption spectroscopy and reflection high-energy electron diffraction (RHEED). The c-BN phase on diamond can be synthesized at the appropriate self-bias and microwave power. In contrast to the Si substrate, the peeling of the c-BN phase from the diamond substrate has not been observed for six months. The RHEED pattern of c-BN film on diamond shows that the c-BN film consists of microcrystals.
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