Abstract
Diamond/CeF3 composite film (DCCF) electroluminescence devices was fabricated on highly doping n-type silicon substrates by using plasma chemical vapor deposition techniques and vacuum electron beam evaporation techniques. The films were characterized by field emission scanning electron microscopy (FE-SEM), Energy dispersive spectrum (EDS), X-ray diffraction (XRD) and electroluminescence (EL) spectrum. The EL spectrum of DCCFs shows that a strong broad peaks are located at 440 nm, and its EL brightness of the device can reach 10 cd/m2 at a forward applied voltage of 120 V. The blue light emitting peak is assigned to the transitions from the excited 5d state to 4f (2F5/2) and 4f (2F7/2) states of Ce3+ ions, respectively.
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