Abstract

Nowadays, nanotechnology has become a vast expanding application which can be used all across the science field such as chemistry, biology, physic, material science and engineering. In this paper, a poly-Si nanowire biosensor was fabricated by using the conventional photolithography technique. In addition, this technique is used to define the initial poly-Si with the dimension of 1 μm. After the conventional photolithography process, the photoresist undergone the development using resist developer and etched with reactive ion etching (RIE). Meanwhile, for the electrical part, it was observable that there was an increase in current when the nanowire has been hybridized with Dengue DNA type-2 (DENV-2) ranging from 10 fM - 10 μM. The morphology of the poly-Si nanowire was characterized by optical microscopy whilst electrically characterized by measuring the two-terminal current-voltage (I-V) characteristic.

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