Abstract
Abstract We have developed an experimental method to extract interfacial thermal resistance (ITR) at organic/semiconductor interface based on optical-interference contactless thermometry. The proposed technique was applied to the SU-8/SiC bilayer sample, and clear oscillations in reflectivity induced by optical interference during pulse heating and cooling were observed. Measured ITR increased with the temperature of SU-8 around interface from 170 mm2KW-1 at 304 K to 515 mm2KW-1 at 369 K. The increasing ITR also leads to an increase in the temperature drop at the interface from 7 K to 73 K.
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