Abstract
Interfacial thermal resistance (ITR) in bi-layer nanofilms is investigated by nonequilibrium molecular dynamics simulation. The relationships among ITR, interfacial temperature, film thickness, heat flux direction and film materials are investigated. The ITR is found to become lower with increasing interfacial temperature, and film thickness has no obvious influence on ITR in the range of the simulation layer thickness. ITR is found to be dependent on the heat flux direction and layer materials. Analyses of heat flux direction and layer materials based on phonon density of states (DOS) indicate that the mismatch of DOS of each layer is the main cause of interfacial resistance and the frequency distribution of DOS also affects interfacial resistance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
