Extended Lifetime Testing of SiC CMOS Electronics at 500°C

Abstract

Silicon Carbide (SiC) CMOS electronics is a promising approach for realizing high level of integration, especially for implementing digital functions, while significantly reducing the power dissipation on chip compared to NMOS-only, or JFET approaches. Gate oxide in MOSFET-based electronics pose a potential reliability challenge for operating at extreme temperatures. GE has previously developed gate oxide reliability models that predicted reliable operation at 500°C, but experimental validation had not been conducted previously. Recent testing results of testing of 500°C operation of SiC CMOS based integrated circuit over 60 days of continuous operation are presented. The results show the gate oxide surviving extended operating time of both NMOS and PMOS devices at 500°C. and thereby enabling a roadmap towards realizing more complex digital function at extreme temperature >=500°C.