Abstract
A CMOS process compatible p-channel tunnel field-effect transistor (TFET) with an epitaxial tunnel layer (ETL) structure is demonstrated experimentally. The fabricated ETL p-TFET exhibits high tunneling current ( $I_{\mathrm{\scriptscriptstyle ON}}\sim 0.17~\mu \text{A}/\mu \text{m}$ at $\vert V_{G}\vert =0.5$ V after $V_{\mathrm {TH}}$ adjustment), ultra-low OFF-state current, and good average subthreshold swing (S.S. $\sim 100$ mV/ decade up to 10 nA/ $\mu \text{m}$ ). Overall performance exceeds that of the current state-of-the-art Ge-based planar p-TFETs.
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