Abstract
In this letter, we demonstrate for the first time a III-nitride hot-electron transistor using an AlGaN (24%) emitter, 10-nm GaN base, and an AlGaN (8%) collector. Individual isotype heterojunctions were characterized by I- V measurements. For the device biased in a common base configuration, a common base transfer ratio of 0.97-0.98 was measured. The hot-electron distribution was obtained by plotting the differential of the collector current with respect to the applied base-collector voltage and demonstrated a Maxwellian shape suggesting near-ballistic transport through the 10-nm base.
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