Abstract
In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5×10 μm 2 device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.
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