Abstract
Current-voltage (I-V) characteristics of the metal-insulator-semiconductor-insulator-metal (MISIM) tunnel transistor in the common base and common emitter configurations are studied experimentally and theoretically. The Al-SiO/sub 2/-Si(n)-SiO/sub 2/-Al transistors with oxide layers of about 2.5 nm thickness have been manufactured. The devices exhibit current gain above 30 in the common base configuration and switching in the common emitter configuration. A theoretical static model of the MISIM tunnel transistor has been developed and applied to analyze the measured I-V characteristics for both operation configurations. Excellent fit of the model to the experimental data has been achieved. Influence of oxide thickness and interface trap density on the switching voltage has been investigated theoretically.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
