Abstract
Linearity characteristics between common-emitter (CE) and common-base (CB) SiGe HBTs are compared at different frequencies using a new analytical expression of third-order intermodulation distortion (IMD3) versus input power (Pin) for the first time. Verified with simulations and measurements, the study shows that there is a potential trade-off between CE and CB configurations for linear power amplification on power gain and linearity in the low- and medium-frequency ranges. In the high-frequency range, CB configuration shows both higher power gain and better linearity than the CE configurations.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
