Abstract
Linearity characteristics between common-emitter (CE) and common-base (CB) SiGe HBTs are compared at different frequencies using a new analytical expression of third-order intermodulation distortion (IMD3) versus input power (Pin) for the first time. Verified with simulations and measurements, the study shows that there is a potential trade-off between CE and CB configurations for linear power amplification on power gain and linearity in the low- and medium-frequency ranges. In the high-frequency range, CB configuration shows both higher power gain and better linearity than the CE configurations.
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