Abstract
We investigated lasing characteristics of 1.3-µm npn-AlGaInAs/InP transistor lasers under applying the collector-base voltage V CB with common base configuration. By simultaneous measurement of laser and transistor characteristics, it was revealed that the Early effect of transistors was main reason of threshold current degradation and output power reduction. We also observed that the red-shift of the peak lasing wavelength depends on collector-base voltage VCB and these behaviors may be explained by the quantum-confinement Stark effect (QCSE).
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