Abstract
For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si ${n}$ FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si ${n}$ FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (~60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.
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