Abstract

Two new approximate expressions are given for the thermoelectric power S Fm of thin monocrystalline films whose transport properties are described in terms of the two-dimensional model of conduction. Comparison between exact and approximate values of the thermoelectric power shows good agreement in well-defined ranges of thickness and scattering parameters ( t,p). If simultaneous measurements of the film resistivity and the thermoelectric power are available it is possible to determine graphically the terms u and v representing the energy dependence of the bulk electronic mean free path and the Fermi surface area. On the basis of the present model previously published data are reinterpreted giving experimental values for u and v and the bulk thermopower.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call