Abstract
Binding energy of Wannier excitons in GaAs/Ga 1−xAl xAs quantum wells is calculated using a variational approach. It is found that the contribution due to the image force effects to the binding energy in the case x = 1 is as significant as the polaronic contribution. Calculated results for the heavy-hole exciton are in good agreement with experimental data obtained from magneto-optical measurements. For thin GaAs slabs sandwiched between the vacuum half-space and the semi-infinite AlAs layer the image force effects on the exciton binding energy is strongly enhanced.
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