Abstract
A theory of excitons in GaAsGa 1−xAl xAs quantum wells is presented, which includes valence band mixing via the calculated subband structure. Binding energies and oscillator strengths are calculated for various excitons in their ground and excited states. This theory implies that parity forbidden excitons have zero oscillator strength, even when valence band mixing is considered, and that some observed transitions cannot be ground state excitons. Examples are given for transitions to the second conduction subband.
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