Abstract
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge–Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga1−xAlxAs quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function ϵ (r) on the calculation of binding energies are specifically investigated. The use of ϵ (r) in comparison with the use of a constant ϵ0increases the binding energy of acceptors as the increase on shallow donors and excitons is quite small.
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