Abstract
The binding energies of shallow donors and acceptors in GaAs(Ga, Al)As quantum wells were obtained as functions of the position of the impurity and GaAs slab thicknesses. It is suggested that a proper consideration of the density of impurity states may be of relevance in the interpretation of experimental data related to shallow impurities in quantum wells. The binding energies of on-edge impurities are shown to increase, for sufficiently large well thicknesses, when the barrier potential (or the Al concentration) decreases, a behavior which contrasts with results previously reported in the literature.
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