Abstract
Within the framework of effective-mass approximation, using a variational method, the combined effect of the hydrostatic pressure and high-frequency laser field on the binding energy of a hydrogenic impurity in square and parabolic GaAs/Ga 1− x Al x As quantum wells is investigated. Our numerical results show that the effects of the laser field on the electronic properties are more pronounced than those of the pressure ones, and the changes in the binding energy are dependent on the shape of the confinement potential. The variations of the impurity binding energy in intense laser fields can be tuned by the hydrostatic pressure.
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