Abstract
ABSTRACTThe influence on defects of Er implanted Al0.70Ga0.30As was studied, using standard Positron Annihilation Spectroscopy (PAS) and Photoluminescence (PL) technique. The incident energy of mono-energetic positrons was implanted from 0.1 eV to 30 keV. The characterization of un-doped Al0.70Ga0.30As and Al0.70Ga0.30As:Er,Yb as implanted, and Al0.70Ga0.30As:Er,Yb annealed ranging from 500 to 900 °C were successfully studied by using PAS technique. Into the incident energy around 5keV, the shape parameter of Al0.70Ga0.30As:Er,Yb annealed ranging from 500 to 900 °C was decreased and the PL intensity also increased in response to the annealing temperature ranging from 500 to 900 °C.
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