Abstract
The various techniques of positron annihilation spectroscopy (PAS) may be among the best for characterizing pore size, pore distribution and interconnectivity in amorphous thin films. In particular, PAS is becoming recognized as a practical characterization method for low-k dielectric films in microelectronic materials research. We expect this area of PAS research to experience a significant increase in activity in the next decade. Many obstacles to using low energy positron beams to depth profile thin film insulators with positron annihilation spectroscopies (PAS) have recently been overcome.
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