Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization

C.D Young,D Veksler,S Rumyantsev,J Huang,H Park,W Taylor,M Shur,G Bersuker

doi:10.1016/j.mee.2011.03.109

Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization

C.D Young, D Veksler + Show 6 more

https://doi.org/10.1016/j.mee.2011.03.109

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Journal: Microelectronic Engineering

Publication Date: Mar 30, 2011

Affiliation: Rensselaer Polytechnic Institute

#Low Frequency Noise Characterization #SiON Interfacial Layers + Show 8 more

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Abstract

Low frequency noise (LFN) characterization was performed on the HfSiON gate stacks fabricated with the SiON interfacial layers (ILs) and a La cap layer. The LFN data identified N and La related defects located in the IL/HK region.

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