Abstract
In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise ([Formula: see text] noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on [Formula: see text] noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.
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