Abstract
BackgroundBiosensors have become essential tools in biotechnology, environmental monitoring, and healthcare industries due to their ability to detect and analyze biological signals. However, conventional Tunnel Field-Effect Transistors (TFETs) used in biosensors face challenges like reduced ON-state current, random dopant fluctuations, and complex manufacturing processes, which limit their effectiveness. AimThe study aims to investigate the effectiveness of Charge Plasma-based Tunnel Field-Effect Transistors (CP-TFETs) with dual and triple metal gate-dual cavity locations for improving the sensitivity and performance of biosensors. MethodologyThe study compares dual and triple metal gate CP-TFET configurations for signal amplification and detection in biosensors. The CP-TFETs use high-k gate dielectric materials to enhance ON-state current and reduce OFF-state current, while the impact of neutralized and charged substances in the cavities on surface energy, electric field, and energy bands is analyzed. ResultsThe triple metal gate configuration demonstrated superior sensitivity in detecting biomolecules compared to the dual metal gate. By utilizing high-k materials and optimizing the gate work function, the triple metal gate approach achieved higher drain current and reduced OFF-state current, leading to improved overall performance. ConclusionThe triple metal gate CP-TFET outperforms its dual metal counterpart in biosensor applications, offering higher sensitivity, increased ON-state current, and improved detection capabilities, making it a promising approach for enhancing biosensor effectiveness.
Published Version
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