Abstract
In this paper we have proposed and analyzed Asymmetric gate stack triple metal gate all around FET (AGSTM) for improvement in performance for applications in the analog domain using SILVACO ATLAS 3D device simulation software. Previously junction less devices with triple metal have been discussed but for the first time we have proposed and analyzed a Schottky barrier device of this type apart from this we have done a comparative analysis of our proposed device AGSTM with other gate all around devices such as Single Metal Gate All Around (SMGAA), Triple Metal Gate All Around (TMGAA), Gate Stack Single Metal (GSSM), Gate Stack Triple Metal (GSTM) and Asymmetric Gate Stack Single Metal (AGSTM) to check its suitability for its use in analog applications. The proposed device gives excellent performance in terms of drain current, transconductance, output conductance, current gain, maximum transducer power gain so it is extremely suitable for analog applications.
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