Abstract

Microspheres of Al have been successfully fabricated utilizing electromigration using sudden change in geometrical shape of a specimen. The experimental sample was a passivated Al line with a hole at the transitional area of the sample. The hole was used to control the accumulation and discharge process. The formation of the microsphere is enhanced by controlling temperature and current density. The atomic flux was increased with the increasing current density that was happened along the electron flow direction in the small region at the geometrical shape of the sample.

Highlights

  • Elecrtromigration (EM) is an atomic migration phenomenon wherein metallic atoms are transported by electron wind due to high current density in a metal line

  • Various micro and nano materials (MNMs) such as micro-wire [9], micro-belt [10], micro-tube [11] have been successfully fabricated by introducing an artificial slit at the anode end of an Al line to promote atomic accumulation

  • A 0.3-μm-thick titanium nitride (TiN) layer was sputtered onto the SiO2 layer; this TiN plays several important roles, including preventing the atomic migration of Al toward the Si wafer, promoting adhesion between Al and the Si wafer, and providing a bypass for current in case an electrical shortcut is induced by the growth of voids due to EM

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Summary

Introduction

Elecrtromigration (EM) is an atomic migration phenomenon wherein metallic atoms are transported by electron wind due to high current density in a metal line. EM is very important techniques for fabricating Al micro and nano materials (MNMs). Different elemental materials have been manufactured by chemical [1] [2] [3] [4] and physical approaches [5] [6] [7] [8]. Al MNMs are difficult to fabricate because of their high reactivity to acids and bases. Various approaches for fabricating Al MNMs have been developed by physical approaches. Various MNMs such as micro-wire [9], micro-belt [10], micro-tube [11] have been successfully fabricated by introducing an artificial slit at the anode end of an Al line to promote atomic accumulation. Fabrication of an Al microsphere using EM methods by introducing an artificial slit at the anode end of the sample has previously been demonstrated [12]. The introduction of a slit is quite time-con-

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