Abstract
An efficient binary collision approximation ion implant code with enhanced prediction capabilities is presented. It includes recent improvements in physical models for compound semiconductors. It uses only one fitting parameter for low dose implantations. A periodic ab initio full bond electron density for the target is used. Damage accumulation is supported using a modified Kinchin–Pease model. To speed-up the code a refined algorithm for statistical noise reduction is also included in a three-dimensional case, including the lateral and shallow zones. The agreement with experiments is good for different target materials. A comparison with experimental SIMS results for several projectiles and targets is presented.
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