Abstract
Metal-induced lateral crystallization (MILC) in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. The MILC velocity of a-Si was successfully increased becoming threefold higher than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas were obtained after 550°C annealing, i.e., ∼10 µm for 5 h and ∼30 µm for 15 h. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large scale integrated circuits.
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