Abstract
Modified metal-induced lateral crystallization (MILC) using a-Ge∕a-Si∕Ni∕SiO2 layered structures has been investigated. MILC growth velocity in the a-Ge∕a-Si layered structures was enhanced by three times compared with that in the a-Si single layers. As a result, poly-Si films with large areas (∼10μm) were obtained in a short time annealing (<5h) at 550°C. It is speculated that crystal nucleation in the a-Ge layers stimulated the bond rearrangement in the a-Si layers, which enhanced the MILC velocity. This will be a powerful tool for realizing large poly-Si areas on insulating films for future system-in-displays.
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