Abstract
Mn-doped ZnGa2O4−xSex thin film phosphors have been grown using pulsed-laser ablation under various growth conditions. The structural characterization was carried out on a series of ZnGa2O4−xSex:Mn2+ films grown on MgO(100) substrates using Zn-rich ceramic targets. Zn-rich ceramic targets have been prepared to compensate the vaporization loss of Zn. The oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The luminescence results indicated that MgO (100) is one of the most promised substrates for the growth of high-quality ZnGa2O4−xSex:Mn2+ films. In particular, the incorporation of Se into the ZnGa2O4 lattice induced a remarkable increase of photoluminescence. The highest green emission intensity was observed with ZnGa2O3.925Se0.075:Mn2+ films whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa2O4:Mn2+ films. This phosphor may promise for application to the flat panel displays.
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