Abstract
Mn-doped ZnGa 2O 4− x Se x thin film phosphors have been grown using pulsed-laser ablation at the various growth conditions. Structural characterization was carried out on a series of ZnGa 2O 4− x Se x :Mn 2+ films grown on MgO(1 0 0) substrates using Zn-rich ceramic targets at various substrate temperatures and oxygen pressures. The films grown under different conditions not only have different crystallinity and surface morphology but also different Zn/Ga composition ratio. The luminescent results indicated that MgO (1 0 0) is one of the most promised substrates for the growth of high quality ZnGa 2O 4− x Se x :Mn 2+ films and the luminescent brightness is sensitive to the substrate temperature and oxygen pressure. In particular, the incorporation of Se into ZnGa 2O 4:Mn 2+ lattice induced a remarkable increase of photoluminescence (PL). The highest green emission intensity was observed with ZnGa 2O 3.925Se 0.075:Mn 2+ films, whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa 2O 4:Mn 2+ films. This phosphor is promising for applications in flat panel displays.
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