Abstract
Abstract Thin-film electroluminescent (TFEL) device fabrication using solution coating techniques which eliminate the need for vacuum processes have been demonstrated. The oxide phosphor thin-film emitting layer and the transparent conducting oxide thin-film electrode were prepared by this less expensive deposition process using metallic complex salts which are low in cost and easy to handle. TFEL devices with dip-coated ZnGa2O4:Mn, Ga2O3:Mn and CaGa2O4:Mn phosphor thin films were compared to devices with sputtered phosphor thin films. TFEL devices with a dip-coated ZnGa2O4:Mn or Ga2O3:Mn thin-film emitting layer exhibited higher luminance than equivalent devices with sputtered thin-film emitting layers: a luminance maximum above 750 or 1000 cd/m2 in green emission, respectively, when driven at 1 kHz.
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