Abstract
Barrier heights of Au Schottky diodes made on In 1− x Ga x As y P 1− y epitaxial layers with interfacial films have been measured. The interfacial layer was either a thin (⋍25 Å) natural oxide film or an oxide film grown by HNO 3 oxidation for which the thickness was much greater (300–500 Å). Room temperature forward-biased current-voltage and capacitance-voltage measurements show that enhancement of the barrier heights ranging from 0.15 to 0.32 eV, depending on composition, is obtained for the natural oxide films. The enhancement is much less for the HNO 3 oxide layers. The best value of the ideality factor n = 1.4 and saturation current densities J s ranging from 10 −4 to 10 −8 A cm −2 are obtained. For the thin natural oxide interfacial films, the results can be explained reasonably with a thermionic emission model taking into account the interfacial oxide layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
