Abstract
Level shifter is inserted between two modules when low voltage drives high voltage modules. Multi supply voltage is used to reduce the static and dynamic power consumption. Multi supply voltage domain technique consists of portioning the design into separate voltage domain. So the time critical domain runs at higher power supply voltage where non-critical domain is runs at lower power supply voltage. The conventional differential cascade voltage switch is the level shifter circuit. The conventional multi threshold CMOS (MTCMOS) greatly reduces the leakage power. But it does wide voltage conversion range is not achieved in level shifter design. So we use a multiple level shifter instead of single level shifter with multi threshold CMOS device. The multiple level shifter design can be achieved the conversion voltage range of 1V to 1.8V. The inter mediate power supply voltage of level shifter contains 400mV,600mV.800mV ranges of operation. It can be designed by using cadence 180nm technology. The synthesis results can be achieved in 310^W power supply.
Highlights
In modern VLSI technology, SOC design has building blocks of component
Instead of multi threshold CMOS transistor multiple level shifter circuit is used in different voltages.It consists of multiple level shifter with multi supply voltage
Each stage operates at different power supply voltage. first stage operates at 400mV power supply, second stage operates at 600mV power supply, third stage operates at 800mV power supply. 1V power supply is used to drive all stages of leveel shifter circuit
Summary
In modern VLSI technology, SOC design has building blocks of component (analog, digital, mixed single chip). The proposed multiple level shifter circuit between two voltage domain achieve the better conversion range of operation compared to single level shifter and MTCMOS technique. S.Lutkemeir et al proposed DCVS circuit by using 90-nm technology It contains multiple level shifter circuit is used to employ supply voltage range from 200mV to 1.2mV. The main drawback of this circuit is it contains only two stages, both stages uses only cross coupled differential inverter It has to proposed by using 90-nm technology The advantage of this circuit is minimizing the leakage power by using MTCMOS technique in DCVS circuit. Another advantage is guarantee a wide voltage conversion range of power supply. It leads more power consumption compared to the single supply voltages.[4]
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