Abstract
Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects used in nanometer CMOS VLSI circuits.
Highlights
A good amount of work on modeling carbon nanotube field-effect transistors (CNT-FETs) has been reported [1,2,3,4]
Srivastava et al [5, 6] have obtained an analytical solution of current transport model for the CNT-FET for analysis and design of CNT-FET-based integrated circuits
We have proposed circuit models for single-walled carbon nanotubes (SWCNTs) bundles as interconnects based on the one-dimensional fluid model
Summary
A good amount of work on modeling carbon nanotube field-effect transistors (CNT-FETs) has been reported [1,2,3,4]. These models are numerical-based and require a mathematical/software realization. A dynamic model [7, 8] for CNT-FETs is obtained and Verilog-AMS language [9] is used to predict static and dynamic characteristics of CNT-FETs and integrated circuits. Fetter [10, 11] and Maffucci et al [12] have investigated electron transport along the CNT and proposed a two-dimensional fluid model. We have proposed circuit models for single-walled carbon nanotubes (SWCNTs) bundles as interconnects based on the one-dimensional fluid model
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