Abstract
Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in typeII structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3 ps to ∼10 ps at 293K as the CdSe shell thickness increases from ∼0.2 nm to ∼2.4 nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between typeI and typeII localization according to an electron-hole overlap function.
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