Electron and Hole Spin Relaxation in InAs Quantum Dots and Quasi-2D Structure

Abstract

Temperature dependence of hole and electron spin relaxation times in both InAs quantum dots (QDs) and quasi‐two‐dimensional (2D) monolayers has been investigated experimentally using time‐resolved photoluminescence (TRPL). The results show that hole spin relaxation time is long enough to be comparable with that of electrons in the quasi‐2D InAs structure, but is one order of magnitude smaller than the electron spin relaxation time in QDs structure. It is shown that both hole and electron spin relaxation times decrease monotonically with increasing temperature for InAs QDs, but show non‐monotonic temperature‐dependent behavior for the quasi‐2D structure. Different spin relaxation mechanisms responsible for spin relaxation in the two structures have been discussed.